Growth of PbTe nanowires by molecular beam epitaxy

Abstract Advances in quantum technology may come from the discovery of new materials systems that improve performance or allow for functionality electronic devices. Lead telluride (PbTe) is a member group IV–VI family has significant untapped potential exploration. Due to its high electron mobility, strong spin–orbit coupling and ultrahigh dielectric constant it can host few-electron dots ballistic wires with opportunities control spins other degrees freedom. Here, we report fabrication PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline large aspect ratios up 50 suitable Furthermore, fabricating nanowire field effect transistor, attain bipolar transport, extract bandgap observe Fabry–Pérot oscillations conductance, signature quasiballistic transmission.